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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-3 package *Complement to type MJ2955 *DC current gain -hFE = 20-70 @ IC = 4 Adc *Excellent safe operating area APPLICATIONS *Designed for general-purpose switching and amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ2955 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -7 -15 -7 115 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased Transition frequency CONDITIONS IC=-0.2A ;IB=0 IC=-0.2A ;RBE=100Ohm IC=-4A; IB=-0.4A IC=-10A ;IB=-3.3A IC=-4A ; VCE=-4V VCE=-30V; IB=0 VCE=-100V; VBE(off)=-1.5V TC=150 VEB=-7V; IC=0 IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V VCE=-40Vdc,t=1.0s, Nonrepetitive IC=-0.5A ; VCE=-10V 20 5.0 -2.87 2.5 MIN -60 -70 TYP. MJ2955 SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE(sat)-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 Is/b fT MAX UNIT V V -1.1 -3.0 -1.5 -0.7 -1.0 -5.0 -5.0 70 V V V mA mA mA A MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ2955 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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